Transistor having dual work function buried gate electrode and method for fabricating the same

ABSTRACT

A transistor having a source region and a drain region which are separately formed in a substrate, a trench which is defined in the substrate between the source region and the drain region, and a gate electrode which is formed in the trench. The gate electrode includes a first electrode buried over a bottom of the trench; a second electrode formed over the first electrode; and a liner electrode having an interface part which is positioned between the first electrode and the second electrode and a side part, which is positioned on sidewalls of the second electrode and overlaps with the source region and the drain region.

CROSS-REFERENCE TO RELATED APPLICATIONS

The present application claims priority of Korean Patent. ApplicationNo. 10-2014-0011584, filed on Jan. 29, 2014, which is incorporatedherein by reference in its entirety.

BACKGROUND

1. Field

Exemplary embodiments of the present invention relate to a transistor,and more particularly, to a transistor having a dual work functionburied gate electrode and a method for fabricating the same.

2. Description of the Related Art

A metal gate electrode may be applied as the gate electrode of atransistor. Gate resistance may be decreased by a metal gate electrodethat has a low resistance. Additionally, since the metal gate electrodemay have a high work function, the channel dose may be decreasedresulting in a reduction of leakage current and improved transistorperformance.

However, a concern is likely to be caused due to the high work function,since gate-induced drain leakage (GIDL) increases where the metal gateelectrode and junction regions overlap, in the source/drain regions.Particularly, in a buried gate type transistor, since the overlap areabetween a buried metal gate electrode and source/drain regions is large,gate-induced drain leakage (GIDL) may be an issue.

To reduce gate-induced drain leakage (GIDL), the height of the buriedmetal gate electrode may be lowered and the overlap area between theburied metal gate electrode and the source/drain regions may beminimized.

Nevertheless, if the height of the buried metal gate electrode islowered, there is a concern that gate resistance increases and thecurrent drivability of the transistor is degraded.

Hence, an improved trade-off characteristic between gate-induced drainleakage (GIDL) and current drivability is in demand.

SUMMARY

Various embodiments of the present invention are directed to a buriedgate type transistor and a method for fabricating the same, for reducinggate-induced drain leakage and improving current drivability.

In an embodiment of the present invention, a transistor may include asource region and a drain region which are separately formed in asubstrate, a trench which is defined in the substrate between the sourceregion and the drain region, and a gate electrode which is formed in thetrench, the gate electrode including: a first electrode buried over abottom of the trench; a second electrode formed over the firstelectrode; and a liner electrode having an interface part, which ispositioned between the first electrode and the second electrode and aside part which is positioned on sidewalls of the second electrode andoverlaps with the source region and the drain region.

In another embodiment of the present invention, a transistor mayinclude: an isolation layer formed in a substrate, and defining anactive region; a source region and a drain region formed in the activeregion, and separated from each other; a trench defined in the activeregion between the source region and the drain region, and extendinginto the isolation layer; a fin region formed in the active region underthe trench; and a gate electrode covering the fin region, and positionedin the trench, the gate electrode including: a first electrode coveringa top and sidewalls of the fin region, and buried under the trench; asecond electrode over the first electrode; a liner electrode having aninterface part which is positioned between the first electrode and thesecond electrode and a side part which is positioned on sidewalls of thesecond electrode and overlaps with the source region and the drainregion; and a barrier layer between the liner electrode and the secondelectrode.

In another embodiment of the present invention, a method for fabricatinga transistor may include: defining a trench in a substrate; forming afirst conductive layer, which has a first work function and gapfills thetrench; removing the first conductive layer from a top surface of thesubstrate to form a first electrode, which partially gapfills thetrench; forming a second conductive layer, which has a second workfunction lower than the first work function, on a top surface of thefirst electrode, sidewalls of the trench and the top surface of thesubstrate; forming a barrier layer over the second conductive layer;forming a low resistance layer over the barrier layer to gapfill thetrench; removing the low resistance layer, the barrier layer and thesecond conductive layer from the top surface of the substrate to form asecond electrode and a liner electrode; and forming a source region anda drain region in the substrate, which are separated from each other bythe trench and have a depth overlapping with the liner electrode.

In another embodiment of the present invention, an electronic device mayinclude at least one buried gate type transistor, the buried gate typetransistor including a source region and a drain region, a trenchbetween the source region and the drain region, and a gate electrode inthe trench, the gate electrode including: a first work function layerburied in a lower portion of the trench; a low resistance layer buriedover the first work function layer; a second work function layer havinga work function lower than the first work function layer and includingan interface part between the first work function layer and the lowresistance layer and a side part which is positioned on sidewalls of thelow resistance layer and overlaps with the source region and the drainregion; and a barrier layer between the second work function layer andthe low resistance layer.

In another embodiment of the present invention, a semiconductor devicemay include at least one buried gate type transistor, the buried gatetype transistor including a source region and a drain region, a trenchbetween the source region and the drain region, and a gate electrode inthe trench, the gate electrode including: a first work function layerburied in a lower portion of the trench; a low resistance layer buriedover the first work function layer; a second work function layer havinga work function lower than the first work function layer and includingan interface part between the first work function layer and the lowresistance layer and a side part which is positioned on sidewalls of thelow resistance layer and overlaps with the source region and the drainregion; and a barrier layer between the second work function layer andthe low resistance layer.

In another embodiment of the present invention, an integrated circuitmay include at least one buried gate type N-channel transistor, theburied gate type N-channel transistor including a source region and adrain region, a trench between the source region and the drain region,and a gate electrode in the trench, the gate electrode including: afirst work function layer buried in a lower portion of the trench; a lowresistance layer buried over the first work function layer; a secondwork function layer having a work function lower than the first workfunction layer and including an interface part between the first workfunction layer and the low resistance layer and a side part which ispositioned on sidewalls of the low resistance layer and overlaps withthe source region and the drain region; and a barrier layer between thesecond work function layer and the low resistance layer.

In another embodiment of the present invention, a memory cell mayinclude a buried gate type transistor, the buried gate type transistorincluding a source region and a drain region, a trench between thesource region and the drain region, and a gate electrode in the trench,the gate electrode including: a first work function layer buried in alower portion of the trench; a low resistance layer buried over thefirst work function layer; a second work function layer having a workfunction lower than the first work function layer and including aninterface part between the first work function layer and the lowresistance layer and a side part which is positioned on sidewalls of thelow resistance layer and overlaps with the source region and the drainregion; and a barrier layer between the second work function layer andthe low resistance layer.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 is a plan view illustrating a transistor in accordance with afirst embodiment of the present invention.

FIG. 2A is a cross-sectional view taken along the line A-A′ of FIG. 1.

FIG. 2B is a cross-sectional view taken along the line B-B′ of FIG. 1.

FIGS. 3A and 3B are cross-sectional views illustrating a transistor inaccordance with a second embodiment of the present invention.

FIGS. 4A to 4F are views illustrating an exemplary method forfabricating a transistor in accordance with the first embodiment of thepresent invention.

FIGS. 5A to 5F are views illustrating an exemplary method forfabricating a transistor in accordance with the second embodiment of thepresent invention.

FIG. 6 is a view illustrating an exemplary semiconductor deviceincluding a transistor in accordance with the embodiments of the presentinvention.

FIG. 7 is a plan view illustrating another exemplary semiconductordevice including a transistor in accordance with the embodiments of thepresent invention.

FIG. 8A is a cross-sectional view taken along the line A-A′ of FIG. 7.

FIG. 8B is a cross-sectional view taken along the line B-B′ of FIG. 7.

FIGS. 9A to 9C are diagrams illustrating various application examples ofan integrated circuit including a transistor in accordance with theembodiments of the present invention.

FIG. 10 is a diagram illustrating an electronic device including atransistor in accordance with the embodiments of the present invention.

DETAILED DESCRIPTION

Various embodiments will be described below in more detail withreference to the accompanying drawings. The present invention may,however, be embodied in different forms and should not be construed aslimited to the embodiments set forth herein. Rather, these embodimentsare provided so that this disclosure will be thorough and complete, andwill fully convey the scope of the present invention to those skilled inthe art. Throughout the disclosure, like reference numerals refer tolike parts throughout the various figures and embodiments of the presentinvention.

The drawings are not necessarily to scale and in some instances,proportions may have been exaggerated to clearly illustrate features ofthe embodiments. When a first layer is referred to as being “on” asecond layer or “on” a substrate, it not only refers to a case where thefirst layer is formed directly on the second layer or the substrate butalso a case where a third layer exists between the first layer and thesecond layer or the substrate.

Also, it is noted that in this specification, “connected/coupled” refersto one component not only directly coupling another component but alsoindirectly coupling another component through an intermediate component.In addition, a singular form may include a plural form, and vice versa,as long as it is not specifically mentioned.

FIG. 1 is a plan view illustrating a transistor in accordance with afirst embodiment of the present invention. FIG. 2A is a cross-sectionalview taken along the line A-A′ of FIG. 1. FIG. 2B is a cross-sectionalview taken along the line B-B′ of FIG. 1.

A transistor 100 will be described with reference to FIGS. 1, 2A and 2B.

A substrate 101 is prepared. The substrate 101 may include asemiconductor substrate. The substrate 101 may be a silicon substrate.An isolation layer 102 is formed in the substrate 101. The isolationlayer 102 may include an isolation dielectric layer which is gapfilledin an isolation trench 103. An active region 104 is defined in thesubstrate 101 by the isolation layer 102.

A trench 105 which has a predetermined depth is defined in the substrate101. The trench 105 may be a line type which extends in any onedirection. The trench 105 has a shape which extends across the activeregion 104 and the isolation layer 102. The trench 105 has a depth thatis shallower than the isolation trench 103. The trench 105 includes afirst trench 105A and a second trench 105B. The first trench 105A isdefined in the active region 104. The second trench 105B is defined inthe isolation layer 102. The first trench 105A and the second trench105B may communicate with each other. The bottom surface of the firsttrench 105A and the bottom surface of the second trench 105B may bepositioned at the same level.

A first impurity region 113 and a second impurity region 114 are formedin the substrate 101. Each of the first impurity region 113 and thesecond impurity region 114 is doped with a conductivity type impurity.For example, the conductivity type impurity may include phosphorus (P)or boron (B). The first impurity region 113 and the second impurityregion 114 are formed in the active region 104 on both sides of thetrench 105. The first impurity region 113 and the second impurity region114 respectively correspond to a source region and a drain region. Thebottom surfaces of the first impurity region 113 and the second impurityregion 114 may be positioned at a predetermined depth from the topsurface of the active region 104. The first impurity region 113 and thesecond impurity region 114 may define the sidewalls of the trench 105.The bottom surfaces of the first impurity region 113 and the secondimpurity region 114 may be higher than the bottom surface of the trench105.

A gate dielectric layer 106 is formed on the bottom surface and thesidewalls of the trench 105. The gate dielectric layer 106 may includeat least one selected from a silicon oxide, a silicon nitride, a siliconoxynitride and a high-k material. The high-k material may be a materialwhich has a dielectric constant higher than the dielectric constants ofa silicon oxide and a silicon nitride.

A buried gate electrode 107 is formed in the trench 105. The buried gateelectrode 107 includes a first electrode 108, a liner electrode 109, abarrier layer 110, and a second electrode 111. The first electrode 108is partially gapfilled in the trench 105. The liner electrode 109 isformed on the top surface of the first electrode 108 and the sidewallsof the trench 105. The second electrode 111 partially gapfills thetrench 105 on the liner electrode 109. The height of the top surface ofthe liner electrode 109 and the second electrode 111 may be the same. Acapping layer 112 is gapfilled on the liner electrode 109 and the secondelectrode 111. The barrier layer 110 is formed between the linerelectrode 109 and the second electrode 111. The buried gate electrode107 is positioned at a level lower than the top surface of the substrate101.

The first electrode 108 includes a material which has specificresistance lower than the liner electrode 109. The first electrode 108and the liner electrode 109 include materials which have different workfunctions. The first electrode 108 includes a high work functionmaterial. The liner electrode 109 includes a low work function material.The high work function material has a work function higher than themid-gap work function of silicon. The low work function material has awork function lower than the mid-gap work function of silicon. The highwork function material has a work function higher than approximately 4.5eV. The low work function material has a work function lower thanapproximately 4.5 eV. The first electrode 108 includes a high workfunction metal-containing material. The high work functionmetal-containing material may include a petal nitride. The firstelectrode 108 may include a titanium nitride.

The liner electrode 109 includes an interface part and a side part. Theinterface part is positioned between the first electrode 108 and thesecond electrode 111, and the side part is positioned on the sidewallsof the second electrode 111. The side part overlaps with the firstimpurity region 113 and the second impurity region 114. The linerelectrode 109 may have a U-shape. The liner electrode 109 may include asilicon-containing material. The silicon-containing material includes apolysilicon. The polysilicon may be doped with an impurity to have a lowwork function. For example, the liner electrode 109 may include apolysilicon which is doped with an N-type impurity. The liner electrode109 may include an N-type doped polysilicon which is doped withphosphorus or arsenic. The first electrode 108 does not overlap with thefirst impurity region 113 and the second impurity region 114. The sidepart of the liner layer 109 overlaps with the first impurity region 113and the second impurity region 114. Since the liner electrode 109 has alow work function, it may be possible to prevent gate-induced drainleakage (GIDL) from occurring in the first impurity region 113 and thesecond impurity region 114 by the liner electrode 109. A thresholdvoltage is controlled by the high work function of the first electrode108. For example, the impurity concentration of a channel may bedecreased by the high work function of the first electrode 108. Thechannel is introduced with an impurity for threshold voltage adjustment.

The second electrode 111 includes a low resistance material. The secondelectrode 111 includes a material which decreases the resistance of theburied gate electrode 107. The second electrode 111 includes a materialwhich has a specific resistance lower than the first electrode 108 andthe liner electrode 109. The second electrode 111 may include ametal-containing material. The second electrode 111 may include tungstenas a low resistance layer. Therefore, the first electrode 108 and thesecond electrode 111 may include a metal-containing material, and theliner electrode 109 may include a non-metal material. To decrease theresistance of the buried gate electrode 107, the liner electrode 109 isformed to a thin thickness.

The barrier layer 110 plays the role of preventing the reaction of theliner electrode 109 and the second electrode 111. The barrier layer 110may include a metal-containing material which has a specific resistancelower than the liner electrode 109. The barrier layer 110 may include atitanium-containing material. For example, the barrier layer 110 mayinclude a titanium nitride. The barrier layer 110 may suppress thereaction of the liner electrode 109 and the second electrode 111, andaccordingly, leakage current may be reduced. Additionally, the barrierlayer 110 prevents the liner electrode 109 and the second electrode 111from directly contacting each other, thus, contact resistance isdecreased.

The capping layer 112 protects the buried gate electrode 107. Thecapping layer 112 may include a dielectric material. The capping layer112 may include a silicon nitride.

The buried gate electrode 107, the first impurity region 113 and thesecond impurity region 114 may constitute the transistor 100. Thechannel of the transistor 100 may be defined along the trench 105between the first impurity region 113 and the second impurity region114. The buried gate electrode 107 becomes a dual work function buriedgate (BG) electrode. The dual work function buried gate electrodeincludes the first electrode 108 having a high work function and theliner electrode 109 having a low work function.

FIGS. 3A and 3B are cross-sectional views illustrating a transistor inaccordance with a second embodiment of the present invention. FIG. 3A isa cross-sectional view taken along the line A-A′ of FIG. 1. FIG. 3B is across-sectional view taken along the line B-B′ of FIG. 1. Somecomponents of a transistor 100 in accordance with the second embodimentof the present invention may be the same as those of the transistor 100in accordance with the first embodiment of the present invention.Detailed descriptions for the same components will be omitted.

Referring to FIGS. 3A and 3B, a trench 105 includes a first trench 105AFand a second trench 105BF. The first trench 105AF is defined in anactive region 104. The second trench 105BF is defined in an isolationlayer 102. The first trench 105AF and the second trench 105BF maycommunicate with each other. The first trench 105AF and the secondtrench 105BF may have bottom surfaces which are positioned at differentlevels. For example, a bottom surface B1 of the first trench 105AF maybe positioned at a higher level than a bottom surface B2 of the secondtrench 105BF. The height difference between the first trench 105AF andthe second trench 105BF is induced as the isolation layer 102 isrecessed on the bottom of the trench 105. The second trench 105BFincludes a recess region R which has the bottom surface B2 positionedlower than the bottom surface B1 of the first trench 105AF.

Due to the step portion formed between the first trench 105AF and thesecond trench 105BF, a fin region 104F is formed in the active region104. In this way, the fin region 104F is formed on the bottom of thetrench 105, and the sidewalls of the fin region 104F are exposed by therecess region R. The fin region 104F serves as a location where achannel is to be formed. The fin region 104F is referred to as a saddlefin. By forming the fin region 104F, channel width may be increased andelectrical characteristics may be improved. A gate dielectric layer 106is formed on the sidewalls and the top surface of the fin region 104F. Afirst electrode 108F has a shape which covers the sidewalls and the topsurface of the fin region 104F. The first electrode 108E is formed inthe trench 105 while filling the recess region R. The cross-sectionalarea of the first electrode 108E is wider in the isolation layer 102than in the active region 104. A liner layer 109 is not positioned closeto the sidewalls of the fin region 104F. The fin region 104F isinfluenced by the high work function of the first electrode 108F.

The transistor 100 in accordance with the second embodiment of thepresent invention is referred to as a buried gate type fin channeltransistor.

According to the first embodiment and the second embodiment, the lowresistance of the buried gate electrodes 107 shown in FIG. 2B, and 107Fis secured by the second electrode 111. Channel dose may be decreased bythe first electrodes 108 and 108F. Gate-induced drain leakage (GIDL) maybe reduced by the liner electrode 109. An abnormal reaction between theliner electrode 109 and the second electrode 111 may be prevented by thebarrier layer 110.

A method for fabricating the transistor in accordance with the firstembodiment of the present invention will now be described. FIGS. 4A to4F are views illustrating an exemplary method for fabricating thetransistor in accordance with the first embodiment of the presentinvention. FIGS. 4A to 4F are cross-sectional views take along the lineA-A′ of FIG. 1.

As shown in FIG. 4A, an isolation layer 12 is formed in a substrate 11.An active region 14 is defined by the isolation layer 12. The isolationlayer 12 may be formed through an STI (shallow trench isolation)process. For example, after forming a pad layer (not shown) on thesubstrate 11, the pad layer and the substrate 11 are etched using anisolation mask (not shown) to define an isolation trench 13. Bygapfilling a dielectric material in the isolation trench 13, theisolation layer 12 is formed. A wall oxide, a liner and a gapfilldielectric may be sequentially formed as the isolation layer 12. Theliner may be formed by stacking a silicon nitride and a silicon oxide.The silicon nitride may include Si₃N₄, and the silicon oxide may includeSiO₂. The gapfill dielectric may include a spin-on dielectric (SOD) Inanother embodiment of the present invention, the isolation layer 12 mayuse a silicon nitride as the gapfill dielectric.

A trench 15 is defined in the substrate 11. The trench 15 may be definedas a line type which extends across the active region 14 and theisolation layer 12. The trench 15 may be defined by forming a maskpattern (not shown) on the substrate 11 and performing an etchingprocess using the mask pattern as an etch mask. The trench 15 may bedefined to be shallower than the isolation trench 13.

A gate dielectric layer 16 is formed on the surface of the trench 15.The gate dielectric layer 16 may be formed through a thermal oxidationprocess. In another embodiment of the present invention, the gatedielectric layer 16 may be formed by chemical vapor deposition (CVD) oratomic layer deposition (ALD). The gate dielectric layer 16 may includeat least one selected among a high-material, an oxide, a nitride and anoxynitride. The high-k material may be a material which has a dielectricconstant higher than the dielectric constants of a silicon oxide and asilicon nitride. For example, the high-k material may be at least oneselected among metal oxides such as a hafnium oxide and an aluminumoxide.

As shown in FIG. 4B, a first conductive layer 17A is formed on the gatedielectric layer 16. The first conductive layer 17A gapfills the trench15. The first conductive layer 17A includes a high work functionmaterial. The first conductive layer 17A may include a titanium nitride.

As shown in FIG. 4C, a first electrode 17 which partially fills thetrench 15 is formed. The first electrode 17 is formed through etching ofthe first conductive layer 17A. The first conductive layer 17A may beetched by an etch-back process.

As shown in FIG. 4D, a second conductive layer 18A is formed. The secondconductive layer 18A is conformally formed on the first electrode 17.The second conductive layer 18A includes a material which has adifferent work function from the first electrode 17. The secondconductive layer 18A includes a low work function material. The secondconductive layer 18A may include a polysilicon layer. The secondconductive layer 18A may include an N-type doped polysilicon.

A third conductive layer 19A and a fourth conductive layer 20A areformed on the second conductive layer 18A. The third conductive layer19A is conformally formed, and the fourth conductive layer 20A gapfillsthe trench 15. The third conductive layer 19A may include a titaniumnitride. The fourth conductive layer 20A may include tungsten as a lowresistance layer.

As shown in FIG. 4E, a removal process is performed so that the secondconductive layer 18A, the third conductive layer 19A and the fourthconductive layer 20A remain in the trench 15. The removal process mayinclude an etch-back process and forms a liner electrode 18, a barrierlayer 19 and a second electrode 20. The liner electrode 18 is formed bythe etch-back process of the second conductive layer 18A, and thebarrier layer 19 and the second electrode 20 are respectively formed bythe etch-back processes of the third conductive layer 19A and the fourthconductive layer 20A. A planarization process may be performed before anetch-back process so that a buried gate electrode 21 is formed in thetrench 15. The buried gate electrode 21 includes the first electrode 17,the liner electrode 18, the barrier layer 19 and the second electrode20.

As shown in FIG. 4F, a capping layer 22 is formed on the buried gateelectrode 21. The capping layer 22 may include a silicon nitride. Asilicon nitride is formed on the buried gate electrode 21 to gapfill thetrench 15. Subsequently, a planarization process is performed such thatthe silicon nitride remains in the trench 15.

A doping process of an impurity is performed by implantation or anotherdoping technology so that a first impurity region 23 and a secondimpurity region 24 are formed in the substrate 11.

A method for fabricating the transistor in accordance with the secondembodiment of the present invention will now be described. FIGS. 5A to5F are views illustrating an exemplary method for fabricating thetransistor in accordance with the second embodiment of the presentinvention. FIGS. 5A to 5F are cross-sectional views taken along the lineB-B′ of FIG. 1.

As shown in FIG. 5A, an isolation layer 12 is formed in a substrate 11.An active region 14 is defined in the isolation layer 12. The isolationlayer 12 may be formed by an STI process.

As shown in FIG. 5B, a trench 15 is defined in the substrate 11. Thetrench 15 may be defined as a line type which extends across the activeregion 14 and the isolation layer 12. The trench 15 may be defined byforming a mask pattern (not shown) on the substrate 11 and performing anetching process using the mask pattern as an etch mask.

As shown in FIG. 5C, the isolation layer 15 is recessed to apredetermined depth defining a recess region R, and a fin region 14F isformed by the recess region R.

As shown in FIG. 5D, a gate dielectric layer 16 is formed on the bottomsurfaces of the fin region 14F and the trench 15 shown in FIG. 5C. Thegate dielectric layer 16 may be formed through a thermal oxidationprocess. In another embodiment of the present invention, the gatedielectric layer 16 may be formed by chemical vapor deposition (CVD) oratomic layer deposition (ALD). The gate dielectric layer 16 may includeat least one selected among a high-k material, an oxide, a nitride andan oxynitride. The high-k material may be a material which has adielectric constant higher than the dielectric constants of a siliconoxide and a silicon nitride. For example, the high-k material may be atleast one selected among metal oxides such as a hafnium oxide and analuminum oxide.

A first conductive layer 17AF is formed on the gate dielectric layer 16.The first conductive layer 17AF gapfills the trench 15 and the recessregion R both shown in FIG. 5C. The first conductive layer 17AF includesa high work function material. The first conductive layer 17AF mayinclude a titanium nitride.

As shown in FIG. 5E, a first electrode 17F is formed to partially fillthe trench 15. The first electrode 17F fully gapfills the recess regionR shown in FIG. 5C and covers the fin region 14F. The first electrode17F is formed by etching of the first conductive layer 17AF shown inFIG. 5D. The first conductive layer 17AF may be etched by an etch-backprocess.

As shown in FIG. 5F, a liner electrode 18, a barrier layer 19 and asecond electrode 20 are formed on the first electrode 17F.

A capping layer 22 is formed on the second electrode 20.

FIG. 6 is a view illustrating a semiconductor device including atransistor in accordance with the embodiments of the present invention.

Referring to FIG. 6, a semiconductor device 200 includes a firsttransistor 220 and a second transistor 240. The first transistor 220 andthe second transistor 240 are formed in a substrate 201, and areisolated from each other by an isolation layer 202.

The first transistor 220 includes a buried gate electrode 205, a firstsource region 211, and a first drain region 212. The buried gateelectrode 205 is formed in a trench 203. A first gate dielectric layer204 is formed on the surface of the trench 203. The buried gateelectrode 205 includes a first electrode 206, a liner electrode 207, abarrier layer 208, and a second electrode 209. A capping layer 210 isformed on the second electrode 209. A fin region (not shown) may beadditionally formed under the buried gate electrode 205. The buried gateelectrode 205 may have a configuration according to the first embodimentand the second embodiment of the present invention. That is, the buriedgate electrode 205 has the structure of a dual work function buried gateelectrode.

The second transistor 240 includes a planar gate electrode 232, a secondsource region 233, and a second drain region 234. A second gatedielectric layer 231 is formed under the planar gate electrode 232. Theplanar gate electrode 232 may include a polysilicon, a metal, a metalnitride, a metal compound, or a combination thereof. The second gatedielectric layer 231 may include at least one selected from a siliconoxide, a silicon nitride, a silicon oxynitride and a high-k material.The high-k material may have a dielectric constant higher than thedielectric constants of a silicon oxide and a silicon nitride. Aninterface layer and a high-k material may be stacked to form the secondgate dielectric layer 23. The interface layer may include a siliconoxide, a silicon nitride or a silicon oxynitride.

In the semiconductor device 200, the first transistor 220 having theburied gate electrode 205 and the second transistor 240 having theplanar gate electrode 232 are integrated in one substrate 201. Afterforming the first transistor 220, the second transistor 240 may beformed.

In the semiconductor device 200, both the first transistor 220 and thesecond transistor 240 may be NMOSFETs.

The semiconductor device 200 may be a CMOSFET. For example, the firsttransistor 220 may become an NMOSFET, and the second transistor 240 maybecome a PMOSFET. In the case of the PMOSFET, a P-type work functionmaterial may be selected as the planar gate electrode 232 to have a workfunction appropriate for a PMOSFET.

The first transistor 220 is referred to as a buried gate typetransistor, and the second transistor 240 is referred to as a planargate type transistor. The planar gate type transistor is an example of anon-buried gate type transistor. The non-buried gate type transistor mayfurther include a fin type transistor which is generally known in theart. The fin type transistor is different from a buried gate type finchannel transistor. In the fin type transistor, a fin region is formedby recessing an isolation layer so that an active region protrudes,without defining a trench.

In the semiconductor device 200, the first transistor 220 may be thetransistor of a memory cell, and the second transistor 240 may be thetransistor of a peripheral circuit region.

Due to the fact that the buried gate electrode 205 includes the firstelectrode 206 formed of a high work function material and the linerelectrode 207 formed of a low work function material, and the linerelectrode 207 is formed to overlap with the first source region 211 andthe first drain region 212, not only may gate resistance be decreased,but also gate-induced drain leakage (GIDL) may be reduced, improving theperformance of the semiconductor device 200.

FIG. 7 is a plan view illustrating another exemplary semiconductordevice including the buried gate type transistor in accordance with theembodiments of the present invention. FIG. 7 is a plan view illustratinga memory cell array, FIG. 8A is a cross-sectional view taken along theline A-A′ of FIG. 7. FIG. 8B is a cross-sectional view taken along theline B-B′ of FIG. 7.

Referring to FIGS. 7, 8A and 8B, a memory cell array 300 includes aplurality of buried gate electrodes 306, a plurality of bit lines 316which extend in a direction crossing with the buried gate electrodes306, and a plurality of memory elements 320.

The memory cell array 300 will be described below in detail.

An isolation layer 302 is formed in a substrate 301. A plurality ofactive regions 303 are defined by the isolation layer 302. Gate trenches304 are defined to extend across the active regions 303. A gatedielectric layer 305 is formed on the surfaces of the gate trenches 304.The buried gate electrodes 306 are formed on the gate dielectric layer305 to partially fill the gate trenches 304. Each of the buried gateelectrodes 306 includes a first electrode 307, a liner electrode 308, abarrier layer 309, and a second electrode 310. A capping layer 311 isformed on the second electrode 310. A fin region (not shown) may beadditionally formed under the buried gate electrode 306. The buried gateelectrode 306 may have a configuration according to the first embodimentand the second embodiment of the present invention. That is, the buriedgate electrode 306 has the structure of a dual work function buried gateelectrode. A first impurity region 312 and a second impurity region 313are formed in the substrate 301 on both sides of the buried gateelectrode 306. A bit line structure which is electrically connected withthe first impurity region 312 may be formed. The bit line structureincludes the bit line 316 and a bit line hard mask layer 317. The bitline structure may further include a first contact plug 315 which isinterposed between the bit line 316 and the first impurity region 312.Spacers 318 are formed on the sidewalls of the bit line structure. Anisolation layer 314 is formed on the substrate 301. The first contactplug 315 may be formed in a first contact hole 315A. The first contactplug 315 is electrically connected with the first impurity region 312.The diameter of the first contact hole 315A may be higher than the linewidth of the bit line 316. The line widths of the first contact plug 315and the bit line 316 may be the same as each other. Therefore, gaps aredefined between the first contact plug 315 and the sidewalls of thefirst contact hole 315A, and portions of the spacers 318 extend to befilled in the gaps. The surface of the first impurity region 312 may berecessed to increase the contact area between the first contact plug 315and the first impurity region 312. The bit line 316 may be a line typewhich extends in a direction crossing the buried gate electrodes 306.The bit line 316 may include at least one selected among a polysilicon,a metal silicide, a metal nitride and a metal. The bit line hard masklayer 317 may include a silicon oxide or a silicon nitride. The firstcontact plug 315 may include at least one selected among a polysilicon,a metal silicide, a metal nitride and a metal. The spacers 318 include adielectric material. The spacers 318 may include a silicon oxide, asilicon nitride or a combination of a silicon oxide and a siliconnitride. The spacers 318 may have a multi-spacer structure. For example,the spacers 318 may have an NON structure of a silicon nitride/a siliconoxide/a silicon nitride. The spacers 318 may also have an air-gapembedded multi-spacer structure. Air gaps 318A may be defined betweenthe bit line 316 and second contact plugs 319. The spacers 318 may havean N-Air-N structure in which air gaps 318A are positioned betweensilicon nitrides. The air gaps 318A may be positioned between the bitline 316 and the second contact plugs 319. Furthermore, the air gaps318A may extend to be positioned between the first contact plug 315 andthe second contact plugs 319. The parasitic capacitance between the bitline 316 and the second contact plugs 319 is decreased by the presenceof the air gaps 318A. Since the parasitic capacitance is decreased,sensing margin may be improved.

The memory element 320 may be formed on the second impurity region 313.The second contact plug 319 may be formed between the memory element 320and the second impurity region 313. A second contact hole 319A isdefined to pass through the isolation layer 314, and each second contactplug 319 may be formed in the second contact hole 319A. The secondcontact plug 319 is electrically connected with the second impurityregion 313. The second contact plug 319 may include at least oneselected among a polysilicon, a metal, a metal silicide and a metalnitride. For example, the second contact plug 319 may include a plugstructure in which a polysilicon, a metal silicide and a metal arestacked. The isolation layer 314 may be a single layer or multiplelayers. The isolation layer 314 may include at least one selected amonga silicon oxide, a silicon nitride and a silicon oxynitride. Theisolation layer 314 may be formed through a damascene process or thelike. The isolation layer 314 serves to isolate adjacent second contactplugs 319 from each other. In another embodiment of the presentinvention, contact spacers which surround the sidewalls of the secondcontact plugs 319 may be additionally formed. The contact spacers mayhave an air-gap embedded multi-spacer structure, or the spacers 318 maynot be defined with the air gaps 318A. The top surfaces of the isolationlayer 314 and the bit line structure may be positioned at the samelevel. In another embodiment of the present invention, third contactplugs (not shown) may be additionally formed on the second contact plugs319. Each of the third contact plugs may have a shape which overlapswith the bit line structure and the second contact plug 319. The thirdcontact plugs may include a metal material.

The memory element 320 which is electrically connected with the secondcontact plug 319 may be formed on the second contact plug 319. Thememory element 320 may be embodied in various forms.

The memory element 320 may be a capacitor. Accordingly, the memoryelement 320 may include a storage node which contacts the second contactplug 319. The storage node may have a cylinder shape or a pillar shape.A capacitor dielectric layer may be formed on the surface of the storagenode. The capacitor dielectric layer may include at least one selectedamong a zirconium oxide, an aluminum oxide and a hafnium oxide. Forexample, the capacitor dielectric layer may have a ZAZ structure inwhich a first zirconium oxide, an aluminum oxide and a second zirconiumoxide are stacked. A plate node may be formed on the capacitordielectric layer. Each of the storage node and the plate node mayinclude a metal-containing material.

The memory element 320 may include a variable resistor. The variableresistor may include a phase change material. The phase change materialmay include at least one selected between Te and Se as chalcogenideelements. In another embodiment of the present invention, the variableresistor may include a transition metal oxide. In still anotherembodiment, the variable resistor may be a magnetic tunnel junction(MTJ).

Due to the fact that the buried gate electrode 306 includes the firstelectrode 307 formed of a high work function material and the linerelectrode 308 formed of a low work function material, and the linerelectrode 308 is formed to overlap with the first impurity region 312and the second impurity region 313, not only may gate resistance bedecreased, but also gate-induced drain leakage (GIDL) may be reduced.

Accordingly, the data retention time of a memory cell may be increasedand the refresh characteristics of a semiconductor device may beimproved.

The transistors according to the embodiments of the present inventionmay be integrated in transistor circuits. Additionally, the transistorsaccording to the embodiments of the present invention may be applied tointegrated circuits having transistors for various purposes. Forexample, the transistors according to the embodiments of the presentinvention may be applied to integrated circuits including an IGFET(insulated gate FET), an HEMT (high electron mobility transistor), apower transistor, a TFT (thin film transistor), and so forth.

The transistors and the integrated circuits according to the embodimentsof the present invention may be built into an electronic device. Theelectronic device may include a memory portion and a non-memory portion.The memory portion may include an SRAM, a DRAM, a FLASH, an MRAM, aReRAM, an STTRAM, a FeRAM, and the like. The non-memory portion mayinclude a logic circuit. For controlling a memory device, the logiccircuit may include a sense amplifier, a decoder, an input/outputcircuit and so forth. Additionally, the logic circuit may includevarious integrated circuits (ICs) other than a memory. For example, thelogic circuit may include a microprocessor, an application processor ofa mobile device, and so forth. Furthermore, the non-memory portionincludes a logic gate such as a NAND gate, a driver IC for a displaydevice, a power semiconductor device such as a power management IC(PMIC), and so forth. The electronic device may include a computingsystem, an image sensor, a camera, a mobile device, a display device, asensor, a medical instrument, an optoelectronic device, a radiofrequency identification (RFID), a photovoltaic cell, a semiconductordevice for an automobile, a semiconductor device for a railroad car, asemiconductor device for an aircraft and so forth.

Various application examples including the transistor according to theembodiments of the present invention will now be described.

FIGS. 9A to 9C are diagrams illustrating various application examples ofan integrated circuit including a transistor in accordance with theembodiments of the present invention.

An integrated circuit 400 shown in FIG. 9A includes a plurality of highvoltage transistors 401 and a plurality of low voltage transistors 402.

An integrated circuit 500 shown in FIG. 9B includes a plurality of logictransistors 501 and a plurality of non-logic transistors 502.

An integrated circuit 600 shown in FIG. 9C includes transistors 601 fora memory device and transistors 602 for a non-memory device.

The above-described high voltage transistors 401, low voltagetransistors 402, logic transistors 501, non-logic transistors 502,transistors 601 for a memory device, and transistors 602 for anon-memory device may include the buried gate type transistors accordingto the embodiments of the present invention. A buried gate typetransistor included in the integrated circuits 400, 500 and 600,includes a buried gate electrode which is formed in a trench. The buriedgate electrode includes a dual work function buried gate electrode. Theburied gate electrode includes a first electrode of a high workfunction, a liner electrode of a low work function, a second electrodeof low resistance, and a barrier layer between the liner electrode andthe second electrode. The liner electrode overlaps with a source regionand a drain region, and therefore, improves gate-induced drain leakage(GIDL) characteristics.

Therefore, the performance of the integrated circuits 400, 500 and 600may be improved.

FIG. 10 is a diagram illustrating an electronic device including atransistor in accordance with the embodiments of the present invention.

Referring to FIG. 10, an electronic device 700 includes a plurality oftransistors. The electronic device 700 may include a plurality ofPMOSFETs 701, a plurality of NMOSFETs 702 and a plurality of CMOSFETs703. At least one of the PMOSFETs 701, the NMOSFETs 702 and the CMOSFETs703 transistors, may include the buried gate type transistors accordingto the embodiments of the present invention. A buried gate typetransistor included in the electronic device 700 includes a buried gateelectrode which is formed in a trench. The buried gate electrodeincludes a dual work function buried gate electrode. The buried gateelectrode includes a first electrode of a high work function, a linerelectrode of a low work function a second electrode of low resistance,and a barrier layer between the liner electrode and the secondelectrode. The liner electrode overlaps with a source region and a drainregion and, therefore, improves gate-induced drain leakage (GIRL)characteristics. Accordingly, the electronic device 700 may scaled-downand operate at high speed.

As is apparent from the above descriptions, according to the embodimentsof the present invention, since a low work function material is formedbetween a metal gate electrode and source/drain regions, currentdrivability may be improved and gate-induced drain leakage (GIDL) may bereduced.

Additionally, according to the embodiments of the present invention,since a barrier layer is formed between the metal gate electrode and thelow work function material, it may be possible to prevent a reaction ofthe metal gate electrode and the low work function material, therebysuppressing the work function change and contact resistance increase ofthe low work function material.

Furthermore, according to the embodiments of the present invention, thechannel dose may be decreased by a high work function material.

According to the embodiments of the present invention, due to the factthat a buried gate electrode is formed using a high work functionmaterial and a low work function material in a manner such that the lowwork function material overlaps with the source/drain regions, not onlymay gate resistance be decreased, but also gate-induced drain leakage(GIDL) may be reduced.

Although various embodiments have been described for Illustrativepurposes, it will be apparent to those skilled in the art that variouschanges and modifications may be made without departing from the spiritand scope of the disclosure as defined in the following claims.

What is claimed is:
 1. A transistor comprising: a source region and adrain region separately formed in a substrate; a trench defined in thesubstrate between the source region and the drain region; and a gateelectrode formed in the trench, wherein the gate electrode includes: atitanium nitride electrode filling a bottom portion of the trench; ametal electrode formed in the trench and over the titanium nitrideelectrode; and a doped polysilicon liner electrode disposed between thetitanium nitride electrode and the metal electrode, wherein the dopedpolysilicon liner electrode extends to between a first sidewall of themetal electrode and the source region, wherein the doped polysiliconliner electrode further extends to between a second sidewall of themetal electrode and the drain region, and wherein the doped polysiliconliner electrode surrounds the first sidewall, the second sidewall, and abottom portion of the metal electrode.
 2. The transistor according toclaim 1, further comprising: a barrier layer disposed between the dopedpolysilicon liner electrode and the metal electrode.
 3. The transistoraccording to claim 2, wherein the metal electrode has resistance lowerthan the titanium nitride electrode, the barrier layer, and the dopedpolysilicon liner electrode.
 4. The transistor according to claim 1,wherein the titanium nitride electrode has a first work function, andwherein the doped polysilicon liner electrode has a second work functionlower than the first work function.
 5. The transistor according to claim1, wherein the titanium nitride electrode has a first work functionhigher than a mid-gap work function of silicon, and wherein the dopedpolysilicon liner electrode has a second work function lower than themid-gap work function of silicon.
 6. The transistor according to claim1, wherein the metal electrode include a metal-containing material, andwherein the doped polysilicon liner electrode has a work function lowerthan the titanium nitride electrode.
 7. The transistor according toclaim 1, wherein the doped polysilicon liner electrode is doped with anN-type impurity, and wherein the doped polysilicon liner electrode has awork function lower than the titanium nitride electrode.
 8. Thetransistor according to claim 1, wherein the gate electrode ispositioned at a level lower than a top surface of the substrate, andwherein the transistor further includes: a capping layer over the gateelectrode; and a gate dielectric layer between the gate electrode and asurface of the trench.
 9. The transistor according to claim 1, furthercomprising: an isolation layer formed in the substrate to define anactive region, wherein the source region and the drain region are formedin the active region and separated from each other, and wherein thetrench is defined in the active region between the source region and thedrain region, and extends into the isolation layer.
 10. The transistoraccording to claim 9, further comprising: a recess region in theisolation layer under the trench; and a fin region formed in the activeregion under the trench, wherein sidewalls of the fin region is exposedby the recess region, wherein the gate electrode covers the fin region,and wherein the titanium nitride electrode covers a top and sidewalls ofthe fin region, while filling the recess region.
 11. The transistor ofclaim 1, wherein the bottom portion of the trench is filled with only asingle layer of the titanium nitride electrode.